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| RF Power Field Effect Transistor LDMOS, 800--1700 MHz, 15W, 26V 7/27/06 Preliminary MAPL-000817-015CPC Features Designed for broadband commercial applications up to 1.7GHz * High Gain, High Efficiency and High Linearity * Typical P1dB performance at 960MHz, 26Vdc, CW * Typical Power Output: 16.5W * Gain: 17.0dB * Efficiency: 50% * 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz * Package Style MAPL-000817-015CPC Maximum Ratings Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.25 -65 to +150 150 Units Vdc Vdc W C C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 4 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary Characteristic DC CHARACTERISTICS @ 25C Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 Adc) Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) Symbol Min Typ Max Unit V(BR)DSS VDS(Q) 65 3 -- -- -- 5 Vdc Vdc VDS(on) -- 0.25 -- Vdc GP EFF () IRL -- -- -- 17 50 -10 -- -- -- dB % dB No Degradation In Output Power Before and After Test -- -- -- 13.0 50 -10 -- -- -- dB % dB GP EFF () IRL (1) Device specifications obtained on a Production Test Fixture. 2 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary C1,C11 Tantalum Surface Mt. Cap., 100 F, 35 V C2,C12 Ceramic Chip Capacitor, 0.1 F C3,C13 Ceramic Chip Capacitor, 1000 pF C4,C6,C14,C17 Chip Capacitor, 39 pF ATC100A C5 Chip Capacitor, 1.8 pF ATC100A C7,C8 Chip Capacitor, 1.0 pF ATC100A C9,C10 Chip Capacitor, 2.7 pF ATC100A C15 Chip Capacitor, 3.0 pF ATC100A C16 Chip Capacitor, 3.3 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 72 nH, CoilCraft 0603 L2 Inductor, 18.5 nH, CoilCraft A05T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPL-000817-015CPC R1 Chip Resistor (0805), 10k Ohm R2 Chip Resistor (0805), 10 Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Distributed Microstrip Element, 0.034" x 0.046" Distributed Microstrip Element, 0.092" x 0.046" Distributed Microstrip Element, 0.532" x 0.046" Distributed Microstrip Element, 0.080" x 0.026" Distributed Microstrip Element, 0.028" x 0.178" Distributed Microstrip Element, 0.216" x 0.178" Distributed Microstrip Element, 0.029" x 0.178" Distributed Microstrip Element, 0.077" x 0.178" Distributed Microstrip Element, 0.211" x 0.178" Distributed Microstrip Element, 0.029" x 0.178" Distributed Microstrip Element, 0.945" x 0.046" Distributed Microstrip Element, 0.125" x 0.046" PC Board Rogers (RO4350) Duroid, 0.020:" thick, Er=3.5, 1 Oz Copper Both Sides Figure 1. 1620-1670 MHz Test Fixture Schematic Figure 2. 1620--1670 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary 20 20 18 18 16 16 14 14 Gain (dB) Gain (dB) 12 12 10 10 8 8 6 6 4 4 2 2 0 0 5 5 7 7 9 9 11 11 Pout (W) Pout (W) 13 13 15 15 17 17 Gain 1670MHz Gain 1670MHz Gain 1620MHz Gain 1620MHz Eff 1670MHz Eff 1670MHz Eff 1620MHz Eff 1620MHz CW, 26VDC,, IDQ=150mA CW, 26VDC IDQ=150mA 60 60 55 55 50 50 Drain Efficiency (%) Drain Efficiency (%) 45 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 Graph 1. 1620, 1670MHz: CW Power Gain and Drain Efficiency vs. Output Power 24 24 CW, 26VDC ,, IDQ=150mA CW, 26VDC IDQ=150mA 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 43 43 22 22 20 20 Gain (dB) Gain (dB) 18 18 16 16 14 14 12 12 10 10 30 30 Gain (920MHz) Gain (920MHz) Gain (940MHz) Gain (940MHz) Gain (960MHz) Gain (960MHz) Eff (920MHz) Eff (920MHz) Eff (940MHz) Eff (940MHz) Eff (960MHz) Eff (960MHz) 31 31 32 32 33 33 34 34 35 35 36 36 37 37 38 38 39 39 40 40 41 41 42 42 Pout (dBm) Pout (dBm) Graph 2. 920, 940, 960MHz: CW Power Gain and Drain Efficiency vs. Output Power 4 Drain Efficiency (%) Drain Efficiency (%) RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015CPC 7/27/06 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
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